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AP4955GM-HF |
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| Part Number | AP4955GM-HF |
| Manufacturer | Advanced Power Electronics |
| Description | G2 S2 G1 S1 AP4955 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designe... |
| Features |
5V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
-20 +12 -5.6 -4.5 -20
2 0.016
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201501125
AP4955GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS ∆BVDSS/∆Tj RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on... |
| Document |
 AP4955GM-HF Data Sheet
PDF 49.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4955GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP4955M |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP4951GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP4951GM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4951GM-HF-3 |
Advanced Power Electronics |
Dual P-channel Enhancement-mode Power MOSFETs |
|