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AP4959GM |
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| Part Number | AP4959GM |
| Manufacturer | Advanced Power Electronics |
| Description | TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absol... |
| Features |
ecifications subject to change without notice
200218051
www.DataSheet4U.com
AP4959GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
2
Min. -16 -0.3 -
Typ. -0.01 10 13 2 4 11 19 38 22 920 175 150
Max. Units 65 75 100 -1.0 -1 -25 ±100 20 1780 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-3A VGS=-1.8V, ID=-1A
VGS(th) g... |
| Document |
 AP4959GM Data Sheet
PDF 101.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4951GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP4951GM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP4951GM-HF-3 |
Advanced Power Electronics |
Dual P-channel Enhancement-mode Power MOSFETs |
|
| 4 | AP4953D |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4953GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|