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AP4957GM-HF |
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| Part Number | AP4957GM-HF |
| Manufacturer | Advanced Power Electronics |
| Description | AP4957 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extre... |
| Features |
nt3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation Storage Temperature Range
Operating Junction Temperature Range
+20 -7.7 -6.1 -30
2 -55 to 150 -55 to 150
V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201409022
AP4957GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Brea... |
| Document |
 AP4957GM-HF Data Sheet
PDF 63.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4957GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP4957AGM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP4957AGM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP4957M |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4951GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|