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AP4951GM |
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| Part Number | AP4951GM |
| Manufacturer | Advanced Power Electronics |
| Description | D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ... |
| Features |
ion-ambient3
Rating -60 ±20 -3.4 -2.7 -20 2
0.016 -55 to 150 -55 to 150
Value 62.5
Units V V A A A W
W/℃ ℃ ℃
Unit ℃/W
Data and specifications subject to change without notice
201108073-1/4
AP4951GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance2 VGS=-10V, ID=-3.4A
Gate ... |
| Document |
 AP4951GM Data Sheet
PDF 178.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4951GM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP4951GM-HF-3 |
Advanced Power Electronics |
Dual P-channel Enhancement-mode Power MOSFETs |
|
| 3 | AP4953D |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP4953GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4953GM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|