VBZE50N04 - VBsemi

VBZE50N04 N-Channel MOSFET

VBZE50N04 N-Channel 40-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0050 at VGS = 10 V 40 0.0065 at VGS = 4.5 V ID (A)a, c 85 70 Qg (Typ.) 80 nC TO-252 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies D RoHS COMPLIANT G GD S S N-Channel MOSFET ABSOLUTE.

Features

• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested APPLICATIONS
• Synchronous Rectification
• Power Supplies D RoHS COMPLIANT G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °.