VBZM60N06 - VBsemi

VBZM60N06 N-Channel MOSFET

VBZM60N06 N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.011 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A)a 60 50 FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: www.VBsemi.com TO-220AB S D G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter .

Features

• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization: www.VBsemi.com TO-220AB S D G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 60 50a Pulsed Drain Current IDM 200 A Continuous Source Current (Diode Conduction) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.3.