VBZR2N7000 - VBsemi

VBZR2N7000 N-Channel MOSFET

VBZR2N7000 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S 3 Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Ou.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• Low On-Resistance: 2 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET® Power MOSFET
• 1200V ESD Protection
• Compliant to RoHS Directive 2002/95/EC BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays.