VBZC8822 - VBsemi

VBZC8822 Dual N-Channel MOSFET

VBZC8822 Dual N-Channel MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0165 at VGS = 4.5 V 20 0.033 at VGS = 2.5 V ID (A) 6.6 5.5 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs Pb-free Available RoHS* COMPLIANT D1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8D 7 S2 6 S2 5 G2 D D G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA.

Features

• Halogen-free Option Available
• TrenchFET® Power MOSFETs Pb-free Available RoHS
* COMPLIANT D1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8D 7 S2 6 S2 5 G2 D D G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 6.6 5.2 5.5 3.5 A IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.5 1.0 0.96 0.6.