VBZE4N60 - VBsemi

VBZE4N60 N-Channel MOSFET

VBZE4N60 www.VBsemi.com N-Channel 600V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 39 10 19 Single FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Av.

Features

• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V, VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMPLIANT TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Curren.