VBZ84 - VBsemi

VBZ84 P-Channel MOSFET

VBZ84 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 3 at VGS = - 10 V VGS(th) (V) - 1 to - 3 ID (mA) -400 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3 Ω • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • L.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• High-Side Switching
• Low On-Resistance: 3 Ω
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range TA = 25.