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VBZE50N04 |
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| Part Number | VBZE50N04 |
| Manufacturer | VBsemi |
| Description | VBZE50N04 N-Channel 40-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0050 at VGS = 10 V 40 0.0065 at VGS = 4.5 V ID (A)a, c 85 70 Qg (Typ.) 80 nC TO-252 FEATURES • Tren... |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies D RoHS COMPLIANT G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °... |
| Document |
 VBZE50N04 Data Sheet
PDF 252.85KB |
| Distributor | Stock | Price | Buy |
|---|
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