VBZE20N06 - VBsemi

VBZE20N06 N-Channel MOSFET

VBZE20N06 N-Channel 6 0-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.023 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 45 30 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, u.

Features

• TrenchFET® Power MOSFET
• 175 °C Junction Temperature Available RoHS
* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 46 28 Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 23 Avalanche Current IAS 20 Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAS 20 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 1.