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VBZE4N60 |
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| Part Number | VBZE4N60 |
| Manufacturer | VBsemi |
| Description | VBZE4N60 www.VBsemi.com N-Channel 600V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 39 10 19 Single FEATURES • Ul... |
| Features |
• Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Curren... |
| Document |
 VBZE4N60 Data Sheet
PDF 255.23KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | VBZE10N65S |
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