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VBZE20N06 |
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| Part Number | VBZE20N06 |
| Manufacturer | VBsemi |
| Description | VBZE20N06 N-Channel 6 0-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.023 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 45 30 FEATURES • TrenchFET® Power MOSFET • 175 °... |
| Features |
• TrenchFET® Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 46 28 Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 23 Avalanche Current IAS 20 Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAS 20 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 1... |
| Document |
 VBZE20N06 Data Sheet
PDF 257.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VBZE10N65S |
VBsemi |
N-Channel Power MOSFET |
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| 2 | VBZE4N60 |
VBsemi |
N-Channel MOSFET |
|
| 3 | VBZE50N04 |
VBsemi |
N-Channel MOSFET |
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| 4 | VBZ84 |
VBsemi |
P-Channel MOSFET |
|
| 5 | VBZC8822 |
VBsemi |
Dual N-Channel MOSFET |
|