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VBZC8822 |
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| Part Number | VBZC8822 |
| Manufacturer | VBsemi |
| Description | VBZC8822 Dual N-Channel MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0165 at VGS = 4.5 V 20 0.033 at VGS = 2.5 V ID (A) 6.6 5.5 FEATURES • Halogen-free Option Available • Trench... |
| Features |
• Halogen-free Option Available • TrenchFET® Power MOSFETs Pb-free Available RoHS* COMPLIANT D1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8D 7 S2 6 S2 5 G2 D D G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 6.6 5.2 5.5 3.5 A IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.5 1.0 0.96 0.6... |
| Document |
 VBZC8822 Data Sheet
PDF 256.82KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | VBZ84 |
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| 2 | VBZE10N65S |
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| 3 | VBZE20N06 |
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| 4 | VBZE4N60 |
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| 5 | VBZE50N04 |
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