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NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs. NEC's stringent quality assurance and test procedures ensu.
• MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz
• ON CHIP OUTPUT POWER CONTROL FUNCTION
• SINGLE SUPPLY VOLTAGE:
VDS = 3.0 V TYP
• PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm)
SUITABLE FOR HIGH- DENSITY SURFACE MOUNT
DESCRIPTION
NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs.
NEC's stringent quality assurance and test proced.
UPD5702TU - NEC
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UPD5710TK |
CEL |
SINGLE CONTROL CMOS SPDT SWITCH |
|
| 2 | UPD5710TK |
NEC |
WIDE BAND SPDT SWITCH |
|
| 3 | UPD5713TK |
CEL |
WIDE BAND SPDT SWITCH |
|
| 4 | UPD5713TK |
Renesas |
WIDE BAND SPDT SWITCH |
|
| 5 | UPD5715GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX |
|
| 6 | UPD5716GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX |
|
| 7 | UPD5738T6N |
NEC |
WIDE BAND DPDT SWITCH |
|
| 8 | UPD5739T7A |
Renesas |
SiGe CMOS |
|
| 9 | UPD5741T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
| 10 | UPD5742T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
| 11 | UPD5747T6J |
NEC |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
| 12 | UPD5750T7D |
Renesas |
SiGe BiCMOS |
|