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NEC's UPD5710TK is a wide-band, single control CMOS MMIC SPDT (Single Pole Double Throw) switch for mobile communications, instrumentation, short range wireless, and general-purpose RF switching applications. This device can operate from DC to 2.5GHz with low insertion loss and high isolatio.
• SUPPLY VOLTAGE : 1.8 to 3.3 V (2.8 V TYP.)
• SINGLE SWITCH CONTROL VOLTAGE: Vcont (H) = 1.8 to 3.3 V (2.8 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
• LOW INSERTION LOSS: 0.6 dB TYP. @ DC to 1.0 GHz 0.8 dB TYP. @ 1.0 to 2.0 GHz 0.95 dB TYP. @ 2.0 to 2.5 GHz
• HIGH ISOLATION: 32.5 dB TYP. @ DC to 1.0 GHz 25 dB TYP. @ 1.0 to 2.0 GHz 22.5 dB TYP. @ 2.0 to 2.5 GHz
• POWER HANDLING: Pin (0.1 dB) = +17.0 dBm TYP. @ 1.0GHz, VDD = 2.8 V Pin (1 dB) = +21.0 dBm TYP. @ 1.0 GHz, VDD = 2.8 V
• HIGH-DENSITY SURFACE MOUNT PACKAGE: 6-pin minimold package (1.5 × 1.1 × 0.55 mm)
• Pb-FREE
DESCRIPTION
NEC's.
UPD5710TK - NEC
The µPD5710TK is a CMOS MMIC for wide band SPDT (Single Pole Double Throw) switch which were developed for mobile commun.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UPD5713TK |
CEL |
WIDE BAND SPDT SWITCH |
|
| 2 | UPD5713TK |
Renesas |
WIDE BAND SPDT SWITCH |
|
| 3 | UPD5715GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX |
|
| 4 | UPD5716GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX |
|
| 5 | UPD5702TU |
CEL |
Si LD MOS POWER AMPLIFIER |
|
| 6 | UPD5702TU |
NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT |
|
| 7 | UPD5738T6N |
NEC |
WIDE BAND DPDT SWITCH |
|
| 8 | UPD5739T7A |
Renesas |
SiGe CMOS |
|
| 9 | UPD5741T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
| 10 | UPD5742T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
| 11 | UPD5747T6J |
NEC |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
| 12 | UPD5750T7D |
Renesas |
SiGe BiCMOS |
|