UPD5747T6J - NEC

UPD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER

The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less minimold, suitable for surface mount. FEATURES • Low Noise • High Gain : NV = −101 dBV TYP. @ VDD = 1.5 V, Ci.

Features

• Low Noise
• High Gain : NV = −101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ
• Low Consumption Current : IDD = 190 μA TYP. @ VDD = 1.5 V, RL = 2.2 kΩ
• Built-in the capacitor for RF noise immunity
• High ESD voltage
• 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) APPLICATIONS
• Microphone, Sensor, etc. ORDERING INFORMATION Part Number Order Number Package 3-pin thin-type leadless minimold (Pb-Free) .