The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less minimold, suitable for surface mount. FEATURES • Low Noise : NV = −101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL.
• Low Noise
: NV = −101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ
: NV = −102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ
• High Gain
: GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ
: GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ
• Low Consumption Current : IDD = 250 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ
• Built-in the capacitor for RF noise immunity
• High ESD voltage
• 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)
APPLICATIONS
• Microphone, Sensor, etc.
ORDERING INFORMATION
Part Number
Order Number
Package
μPD5741T6J-E4
μPD5741T6J-E4-A
3-pin th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPD5742T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER | |
2 | UPD5747T6J |
NEC |
LOW NOISE AND HIGH GAIN AMPLIFIER | |
3 | UPD5702TU |
CEL |
Si LD MOS POWER AMPLIFIER | |
4 | UPD5702TU |
NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT | |
5 | UPD5710TK |
CEL |
SINGLE CONTROL CMOS SPDT SWITCH | |
6 | UPD5710TK |
NEC |
WIDE BAND SPDT SWITCH | |
7 | UPD5713TK |
CEL |
WIDE BAND SPDT SWITCH | |
8 | UPD5713TK |
Renesas |
WIDE BAND SPDT SWITCH | |
9 | UPD5715GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX | |
10 | UPD5716GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX | |
11 | UPD5738T6N |
NEC |
WIDE BAND DPDT SWITCH | |
12 | UPD5739T7A |
Renesas |
SiGe CMOS |