DATA SHEET CMOS INTEGRATED CIRCUIT µPD5715GR CMOS MMIC 4 x 2 IF SWITCH MATRIX FEATURES • 4 independent IF channels, integral switching to channel input to either channel output • Integrated 4 bit decoder • Frequency range • High isolation D/U ratio • Insertion loss • Insertion loss flatness • Control voltage : f = 250 to 2 150 MHz : ISL = 29 dB TYP. : LIN.
• 4 independent IF channels, integral switching to channel input to either channel output
• Integrated 4 bit decoder
• Frequency range
• High isolation D/U ratio
• Insertion loss
• Insertion loss flatness
• Control voltage : f = 250 to 2 150 MHz : ISL = 29 dB TYP. : LINS = 6.7 dB TYP. @ZO = 50 Ω : ∆LINS = 0.7 dB TYP. : VCONT = 0 V/+3.3 V
• 16-pin plastic HTSSOP package
APPLICATIONS
• DBS IF switching
• Switch box
• 4 × 2 switching application for microwave signal
ORDERING INFORMATION
Part Number Order Number Package Marking D5715 Supplying Form
• Embossed tape 12 mm wide
• Pin 8, 9 face the.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPD5710TK |
CEL |
SINGLE CONTROL CMOS SPDT SWITCH | |
2 | UPD5710TK |
NEC |
WIDE BAND SPDT SWITCH | |
3 | UPD5713TK |
CEL |
WIDE BAND SPDT SWITCH | |
4 | UPD5713TK |
Renesas |
WIDE BAND SPDT SWITCH | |
5 | UPD5716GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX | |
6 | UPD5702TU |
CEL |
Si LD MOS POWER AMPLIFIER | |
7 | UPD5702TU |
NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT | |
8 | UPD5738T6N |
NEC |
WIDE BAND DPDT SWITCH | |
9 | UPD5739T7A |
Renesas |
SiGe CMOS | |
10 | UPD5741T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER | |
11 | UPD5742T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER | |
12 | UPD5747T6J |
NEC |
LOW NOISE AND HIGH GAIN AMPLIFIER |