PreliminaryData Sheet μPD5739T7A FEATURES SiGe/CMOS Integrated Circuit 4 × 2 IF Switch Matrix with Gain and Tone/Voltage Controller R09DS0002EJ0100 Rev.1.00 Jul 6, 2010 • 4 independent IF channels, integral switching to channel input to either channel output. • 4 × 2 switch matrix with integrated IF amplifier and switch control - Tone/Voltage. - Switch’s.
SiGe/CMOS Integrated Circuit 4 × 2 IF Switch Matrix with Gain and Tone/Voltage Controller
R09DS0002EJ0100 Rev.1.00 Jul 6, 2010
• 4 independent IF channels, integral switching to channel input to either channel output.
• 4 × 2 switch matrix with integrated IF amplifier and switch control - Tone/Voltage. - Switch’s Enable mode is linked VCC external pins.
• Frequency range : f = 950 MHz to 2 150 MHz
• High isolation : ISLD/U = 30 dB TYP. @Worst mode
• Power gain : GP = 18 dB TYP. @ ZS = ZL = 50 Ω
• Power gain flatness : ΔGP = 1.0 dB TYP.
• Surface mounting : 28-pin 5 × 5 mm square micro lead .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPD5738T6N |
NEC |
WIDE BAND DPDT SWITCH | |
2 | UPD5702TU |
CEL |
Si LD MOS POWER AMPLIFIER | |
3 | UPD5702TU |
NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT | |
4 | UPD5710TK |
CEL |
SINGLE CONTROL CMOS SPDT SWITCH | |
5 | UPD5710TK |
NEC |
WIDE BAND SPDT SWITCH | |
6 | UPD5713TK |
CEL |
WIDE BAND SPDT SWITCH | |
7 | UPD5713TK |
Renesas |
WIDE BAND SPDT SWITCH | |
8 | UPD5715GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX | |
9 | UPD5716GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX | |
10 | UPD5741T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER | |
11 | UPD5742T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER | |
12 | UPD5747T6J |
NEC |
LOW NOISE AND HIGH GAIN AMPLIFIER |