UPD5702TU NEC 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

UPD5702TU

NEC
UPD5702TU
UPD5702TU UPD5702TU
zoom Click to view a larger image
Part Number UPD5702TU
Manufacturer NEC
Description The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged ...
Features
• Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage : VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting. APPLICATIONS
• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.) ORDERING INFORMATION Part Number µPD5702TU-E2 Package 8-pin Lead-Less Minimold Marking 5702 Supplying Fo...

Document Datasheet UPD5702TU Data Sheet
PDF 61.86KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 UPD5702TU
CEL
Si LD MOS POWER AMPLIFIER Datasheet
2 UPD5710TK
CEL
SINGLE CONTROL CMOS SPDT SWITCH Datasheet
3 UPD5710TK
NEC
WIDE BAND SPDT SWITCH Datasheet
4 UPD5713TK
CEL
WIDE BAND SPDT SWITCH Datasheet
5 UPD5713TK
Renesas
WIDE BAND SPDT SWITCH Datasheet
More datasheet from NEC



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact