R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application. This IC exhibits low noise figure and high power gain characteristics. The μPD5750T7D has an LNA pass-through function (bypass function) to prevent the degradation of the received signal quality at the strong el.
• Low voltage operation
• Low mode control voltage
• Low current consumption
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• : VCC = 1.8 V TYP. : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V : ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode) : ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode) Low noise : NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz High gain : GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : GP = 12.5 dB TYP. @VCC = 1.8 V, f = 770 MHz Low insertion loss : Lins = 1.2 dB TYP. @VCC = 1.8 V, f = 470 MHz (Bypass-mode) : Lins = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz Hig.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPD5753T7G |
Renesas |
SiGe BiCMOS | |
2 | UPD5754T7A |
Renesas |
SiGe BiCMOS | |
3 | UPD5756T6N |
Renesas |
SiGe BiCMOS | |
4 | UPD5758T6J |
Renesas |
Low Noise and High Gain Amplifier | |
5 | UPD5759T6J |
Renesas |
Low Noise and High Gain Amplifier | |
6 | UPD5702TU |
CEL |
Si LD MOS POWER AMPLIFIER | |
7 | UPD5702TU |
NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT | |
8 | UPD5710TK |
CEL |
SINGLE CONTROL CMOS SPDT SWITCH | |
9 | UPD5710TK |
NEC |
WIDE BAND SPDT SWITCH | |
10 | UPD5713TK |
CEL |
WIDE BAND SPDT SWITCH | |
11 | UPD5713TK |
Renesas |
WIDE BAND SPDT SWITCH | |
12 | UPD5715GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX |