TSM35N03 - Taiwan Semiconductor Company

TSM35N03 Straight 1-Row BergStik II Headers

TSM35N03 25V N-Channel MOSFET TO-252 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 8.5 @ VGS = 10V 13 @ VGS = 4.5V ID (A) 30 30 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Converters and Motors Drivers Ordering Information Bl.

Features

● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance Application
● Load Switch
● Dc-DC Converters and Motors Drivers Ordering Information Block Diagram Part No. TSM35N03CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS @4.5V. VGS ID Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction)a,b IDM IS Single Pulse Drain to Source Avalanche Energy (VDD = 100V, V.