TSM35N10 - Taiwan Semiconductor

TSM35N10 100V N-Channel Power MOSFET

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Features

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● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70 35 61 83.3 53.3 2 1.3 -55 to +150 -55 to +150 Unit V V Continuous Drain Current ID A Drain Current-Pulsed Note .