TSM300NB06CR - Taiwan Semiconductor

TSM300NB06CR N-Channel Power MOSFET

TSM300NB06CR Taiwan Semiconductor N-Channel Power MOSFET 60V, 27A, 30mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested. ● 175°C Operating Junction Temperature ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY.

Features

● Low RDS(ON) to minimize conductive losses
● Low gate charge for fast power switching
● 100% UIS and Rg tested.
● 175°C Operating Junction Temperature
● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 30 mΩ Qg 18 nC APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● DC-DC converter
● Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C u.