TSM340N06 - Taiwan Semiconductor

TSM340N06 N-Channel Power MOSFET

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Features

TC = 25°C Operating Junction Temperature Storage Temperature Range VDS VGS ID IDM EAS IAS PD TJ TSTG 60 ±20 30 19 120 24 22 40 27 150 -55 to +150 TO-220 66 Unit V V A A A mJ A W °C °C 1/9 Version: D14 TSM340N06 60V N-Channel Power MOSFET Thermal Performance Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJC RӨJA 3.1 4.7 1.9 62 Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Sou.