TSM3424 - Taiwan Semiconductor Company

TSM3424 30V N-Channel MOSFET

TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 @ VGS = 10V 30 42 @ VGS = 4.5V ID (A) 6.7 5.7 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information B.

Features

● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance Application
● Load Switch
● PA Switch Ordering Information Block Diagram Part No. Package Packing TSM3424CX6 RF SOT-26 3Kpcs / 7” Reel TSM3424CX6 RFG SOT-26 3Kpcs / 7” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation Ta = 25oC Ta.