TSM35N03 |
Part Number | TSM35N03 |
Manufacturer | Taiwan Semiconductor Company |
Description | TSM35N03 25V N-Channel MOSFET TO-252 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 8.5 @ VGS = 10V 13 @ VGS = 4.5V ID (A) 30 30 Features ● Advance Trench Pr... |
Features |
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Converters and Motors Drivers Ordering Information Block Diagram Part No. TSM35N03CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS @4.5V. VGS ID Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction)a,b IDM IS Single Pulse Drain to Source Avalanche Energy (VDD = 100V, V... |
Document |
TSM35N03 Data Sheet
PDF 235.14KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TSM35N10 |
Taiwan Semiconductor |
100V N-Channel Power MOSFET | |
2 | TSM35N10CP |
Taiwan Semiconductor |
100V N-Channel Power MOSFET | |
3 | TSM300NB06CR |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
4 | TSM320N03CX |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
5 | TSM3400 |
Taiwan Semiconductor Company |
30V N-Channel MOSFET |