TSM3401 - Taiwan Semiconductor Company

TSM3401 P-Channel Power MOSFET

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness.

Features

● Advance Trench Process Technology
● High Density Cell Design for Ultra Low Onresistance
● Pb-free plating
● RoHS compliant
● Halogen-free package Application
● Load Switch
● PA Switch SOT23 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 60 90 V mΩ Qg 9.52 nC Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TA = 25°C VGS ID IDM.