TSM3442 - Taiwan Semiconductor Company

TSM3442 20V N-CHANNEL MOSFET

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Features

● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance APPLICATION
● Load Switch
● PA Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 20 V VGS = 4.5V 70 RDS(on) (max) VGS = 2.5V 90 mΩ Qg 5.4 nC SOT-26 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Operating Junction and Stor.