TPCA8A08-H - Toshiba

TPCA8A08-H Silicon N-Channel MOSFET

TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Built-in a schottky barrier diode Low forward voltage: VDSF = −0.6 V (max) • High-speed switching • Small gate charge: QSW = .

Features

e 1) Drain power dissipation (Tc = 25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25℃) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg 30 V 30 V ±20 V 38 A 114 45 W 2.8 W 1.6 W 188 mJ 38 A 2.57 mJ 150 °C −55 to 150 °C 0.8 ± 0.1 8 5 1,2,3: SOURCE 4: GATE 5,6,7,8: DRAIN JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8765 .