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TPCA8A08-H |
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| Part Number | TPCA8A08-H |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-DC Converter Applications Notebook PC Applications... |
| Features |
e 1)
Drain power dissipation (Tc = 25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD PD
PD
EAS IAR EAR Tch Tstg
30
V
30
V
±20
V
38 A
114
45
W
2.8
W
1.6
W
188
mJ
38
A
2.57
mJ
150
°C
−55 to 150
°C
0.8 ± 0.1
8
5
1,2,3: SOURCE
4: GATE
5,6,7,8: DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
... |
| Document |
 TPCA8A08-H Data Sheet
PDF 231.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TPCA8A01-H |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | TPCA8A02-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TPCA8A04-H |
Toshiba |
Silicon N-Channel MOSFET |
|
| 4 | TPCA8A09-H |
Toshiba Semiconductor |
MOSFETs |
|
| 5 | TPCA8A10-H |
Toshiba |
Field Effect Transistor |
|