Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H 0.5 ± 0.1 High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Built-in a schottky barrier diode 6.0 ± 0.3 Unit: mm 0.4 ± 0.1 5 8 1.27 0.05 M A 5.0 ± 0.2 Low f.
V A W W 1,2,3 : SOURCE 4 : GATE 5,6,7,8 : DRAIN JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Weight: 0.069 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) 1.6 W Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 252 44 3.32 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 1.1 ± 0.2 0.05 S 4 Note: For Notes 1 to 4,.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TPCA8A01-H |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | TPCA8A02-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TPCA8A08-H |
Toshiba |
Silicon N-Channel MOSFET |
|
| 4 | TPCA8A09-H |
Toshiba Semiconductor |
MOSFETs |
|
| 5 | TPCA8A10-H |
Toshiba |
Field Effect Transistor |
|
| 6 | TPCA8A11-H |
Toshiba Semiconductor |
MOSFETs |
|
| 7 | TPCA8003-H |
Toshiba Semiconductor |
Field Effect Transistor Silicon N Channel MOS Type |
|
| 8 | TPCA8004-H |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
|
| 9 | TPCA8005-H |
Toshiba Semiconductor |
Silicon N Channel MOS Type |
|
| 10 | TPCA8006-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | TPCA8007-H |
Toshiba Semiconductor |
Switching Regulator Applications |
|
| 12 | TPCA8008-H |
Toshiba Semiconductor |
Field Effect Transistor |
|