TPCA8A02-H - Toshiba Semiconductor

TPCA8A02-H Silicon N-Channel MOSFET

TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.5±0.1 1.27 8 0.4±0.1 5 Unit: mm 0.05 M A • • • • • • • Built-in a schottky barrier diode 6.0±0.3 High-speed switching Sm.

Features

orage temperature range EAR Tch Tstg Rating 30 30 ±20 34 102 45 2.8 Unit V V V A W W 4.25±0.2 8 5 0.8±0.1 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE JEDEC JEITA TOSHIBA ⎯ ⎯ 2-5Q1A Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Weight: 0.069 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) 1.6 W Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Circuit Configuration 150 34 3.23 150 −55 to 150 mJ A mJ °C °C 8 7 6 3.5±0.2 5 Note: For Notes 1 to 4, refer to the next page. 1 2 3 4 Using continu.