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TPCA8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVII) TPCA8006-H Switching Regulator Applications Motor Drive Applications DC／DC Converter Applications 0.5±0.1 Unit: mm 1.27 0.4±0.1 8 5 0.05 M A 6.0±0.3 5.0±0.2 • Small footprint due to a small and thin package • High speed switching • Low drain-source ON-resistance : RDS (.
e avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating Unit 100 V 100 V ±20 V 18 A 36 45 W 2.8 W 1.6 W 224 mJ 18 A 4.5 mJ 150 °C −55 to 150 °C 8 5 0.8±0.1 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8765 1234 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/cu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TPCA8003-H |
Toshiba Semiconductor |
Field Effect Transistor Silicon N Channel MOS Type |
|
| 2 | TPCA8004-H |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
|
| 3 | TPCA8005-H |
Toshiba Semiconductor |
Silicon N Channel MOS Type |
|
| 4 | TPCA8007-H |
Toshiba Semiconductor |
Switching Regulator Applications |
|
| 5 | TPCA8008-H |
Toshiba Semiconductor |
Field Effect Transistor |
|
| 6 | TPCA8009-H |
Toshiba Semiconductor |
High Speed Switching Applications |
|
| 7 | TPCA8010-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 8 | TPCA8011-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | TPCA8014-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 10 | TPCA8015-H |
Toshiba Semiconductor |
High Efficiency DC/DC Converter Applications |
|
| 11 | TPCA8016-H |
Toshiba Semiconductor |
High-Speed and High-Efficiency DC-DC Converters |
|
| 12 | TPCA8019-H |
TOSHIBA |
MOSFET |
|