www.DataSheet4U.com TENTATIVE TPCA8007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVII) TPCA8007-H 0.5±0.1 Switching Regulator Applications Motor Drive Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A • • • • • High speed switching Low drain-source ON resistance : R DS (ON) = 30 mO (typ.) (VG =10V, ID=10A) High forward.
Drain power dissipation Drain power dissipation (Tc=25
•Ž ) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
Weight: 0.080 g (typ.)
PD
1.6
W
Circuit Configuration
8 7 6 5
EA S IAR EAR Tch Tstg
351 20 4.5 150 −55 to 150
mJ A mJ °C °C
1
2
3
3.5±0.2
1.1±0.2
0.05 S
4
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCA8003-H |
Toshiba Semiconductor |
Field Effect Transistor Silicon N Channel MOS Type | |
2 | TPCA8004-H |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | |
3 | TPCA8005-H |
Toshiba Semiconductor |
Silicon N Channel MOS Type | |
4 | TPCA8006-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | TPCA8008-H |
Toshiba Semiconductor |
Field Effect Transistor | |
6 | TPCA8009-H |
Toshiba Semiconductor |
High Speed Switching Applications | |
7 | TPCA8010-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
8 | TPCA8011-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TPCA8014-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
10 | TPCA8015-H |
Toshiba Semiconductor |
High Efficiency DC/DC Converter Applications | |
11 | TPCA8016-H |
Toshiba Semiconductor |
High-Speed and High-Efficiency DC-DC Converters | |
12 | TPCA8019-H |
TOSHIBA |
MOSFET |