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TPCA8007-H - Toshiba Semiconductor

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TPCA8007-H Switching Regulator Applications

www.DataSheet4U.com TENTATIVE TPCA8007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ƒÎ -MOSVII) TPCA8007-H 0.5±0.1 Switching Regulator Applications Motor Drive Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A • • • • • High speed switching Low drain-source ON resistance : R DS (ON) = 30 mO (typ.) (VG =10V, ID=10A) High forward.

Features

Drain power dissipation Drain power dissipation (Tc=25
•Ž ) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Weight: 0.080 g (typ.) PD 1.6 W Circuit Configuration 8 7 6 5 EA S IAR EAR Tch Tstg 351 20 4.5 150 −55 to 150 mJ A mJ °C °C 1 2 3 3.5±0.2 1.1±0.2 0.05 S 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with .

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