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TPCA8A11-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A11-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 10 nC (typ.) Low drain-source o.
(1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 10 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2011-04-04 Rev.1.0 TPCA8A11-H 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TPCA8A10-H |
Toshiba |
Field Effect Transistor |
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| 2 | TPCA8A01-H |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | TPCA8A02-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | TPCA8A04-H |
Toshiba |
Silicon N-Channel MOSFET |
|
| 5 | TPCA8A08-H |
Toshiba |
Silicon N-Channel MOSFET |
|
| 6 | TPCA8A09-H |
Toshiba Semiconductor |
MOSFETs |
|
| 7 | TPCA8003-H |
Toshiba Semiconductor |
Field Effect Transistor Silicon N Channel MOS Type |
|
| 8 | TPCA8004-H |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
|
| 9 | TPCA8005-H |
Toshiba Semiconductor |
Silicon N Channel MOS Type |
|
| 10 | TPCA8006-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 11 | TPCA8007-H |
Toshiba Semiconductor |
Switching Regulator Applications |
|
| 12 | TPCA8008-H |
Toshiba Semiconductor |
Field Effect Transistor |
|