TPCA8008-H - Toshiba Semiconductor

TPCA8008-H Field Effect Transistor

TPCA8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCA8008-H High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications 6.0±0.3 Unit: mm 0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC.

Features

n power dissipation Weight: 0.069 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) 1.6 W Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 11 4 4.5 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) 1.1±0.2 0.05 S 0.166±0.05 Low drain-source ON-resistance: RDS (ON) = 0.47Ω (typ.) 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high tempe.