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TPCA8A02-H |
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| Part Number | TPCA8A02-H |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications... |
| Features |
orage temperature range EAR Tch Tstg Rating 30 30 ±20 34 102 45 2.8 Unit V V V A W W
4.25±0.2
8
5
0.8±0.1
1,2,3:SOURCE 5,6,7,8:DRAIN
4:GATE
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-5Q1A
Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a)
Drain power dissipation Drain power dissipation
Weight: 0.069 g (typ.)
Drain power dissipation
(t = 10 s) (Note 2b)
1.6
W
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy
Circuit Configuration
150 34 3.23 150 −55 to 150 mJ A mJ °C °C
8
7
6
3.5±0.2
5
Note: For Notes 1 to 4, refer to the next page.
1
2
3
4
Using continu... |
| Document |
 TPCA8A02-H Data Sheet
PDF 209.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TPCA8A01-H |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | TPCA8A04-H |
Toshiba |
Silicon N-Channel MOSFET |
|
| 3 | TPCA8A08-H |
Toshiba |
Silicon N-Channel MOSFET |
|
| 4 | TPCA8A09-H |
Toshiba Semiconductor |
MOSFETs |
|
| 5 | TPCA8A10-H |
Toshiba |
Field Effect Transistor |
|