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Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipatio.
·Low On resistance.
·-4.5V drive.
·RoHS compliant.
Si4435
P-Channel Enhancement MOSFET
Si4435
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
Ratings
-30 +20 -8 -50 1.3 1.7 150 -55~+150
Unit
V V A A W W .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Si4430 |
Silicon Laboratories |
ISM TRANSCEIVER |
|
| 2 | SI4430BDY |
Vishay Siliconix |
N-Channel MOSFET |
|
| 3 | SI4430DY |
Vishay Siliconix |
N-Channel MOSFET |
|
| 4 | Si4431 |
Silicon Laboratories |
ISM TRANSCEIVER |
|
| 5 | SI4431ADY |
Vishay Siliconix |
P-Channel MOSFET |
|
| 6 | SI4431BDY |
Vishay Siliconix |
P-Channel MOSFET |
|
| 7 | SI4432 |
Silicon Labs |
ISM Transceiver |
|
| 8 | SI4433DY |
Vishay Siliconix |
P-Channel 1.8-V (G-S) MOSFET |
|
| 9 | SI4434DY |
Vishay Siliconix |
N-Channel MOSFET |
|
| 10 | SI4435BDY |
Vishay Siliconix |
P-Channel 30-V (D-S) MOSFET |
|
| 11 | SI4435DY |
International Rectifier |
Power MOSFET |
|
| 12 | SI4435DY |
Kexin |
P-Channel MOSFET |
|