SI4435BDY - Vishay Siliconix

SI4435BDY P-Channel 30-V (D-S) MOSFET

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Features

ID (A) −9.1 −6.9 rDS(on) (W) 0.020 @ VGS = −10 V 0.035 @ VGS = −4.5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS Compliant Available APPLICATIONS D Load Switches D Battery Switch SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4435BDY-T1 Si4435BDY-T1—E3 (Lead (Pb)-Free) 8 7 6 5 D D D D G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximu.