SI4433DY - Vishay Siliconix

SI4433DY P-Channel 1.8-V (G-S) MOSFET

Si4433DY www.DataSheet4U.com New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = –4.5 V –20 0.160 @ VGS = –2.5 V 0.240 @ VGS = –1.8 V FEATURES ID (A) –3.9 –3.2 –2.6 D TrenchFETr Power MOSFET D Fast Switching APPLICATION D DC-DC Conversion D Asynchronous Buck Converter D Voltage Inverter S SO-8 S .

Features

ID (A)
  –3.9
  –3.2
  –2.6 D TrenchFETr Power MOSFET D Fast Switching APPLICATION D DC-DC Conversion D Asynchronous Buck Converter D Voltage Inverter S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID
  –2.8 IDM IS
  –2.1 2.5 1.3
  –55 to 1.