SI4434DY - Vishay Siliconix

SI4434DY N-Channel MOSFET

N-Channel 250-V (D-S) MOSFET Si4434DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 0.155 at VGS = 10 V 0.162 at VGS = 6.0 V ID (A) 3.0 2.9 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET® Power MOSFET • 100 % Rg Tested • Avalanche Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS • Primary Side .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• PWM-Optimized TrenchFET® Power MOSFET
• 100 % Rg Tested
• Avalanche Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS
• Primary Side Switch In: - Telecom Power Supplies - Distributed Power Architectures - Miniature Power Modules D G Top View Ordering Information: Si4434DY-T1-E3 (Lead (Pb)-free) Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 20 Continuo.