SI4435DY - Fairchild Semiconductor

SI4435DY 30V P-Channel MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON.

Features

•
  –8.8 A,
  –30 V RDS(ON) = 20 mΩ @ VGS =
  –10 V RDS(ON) = 35 mΩ @ VGS =
  –4.5 V
• Low gate charge (17nC typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range T.