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Si4435 |
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| Part Number | Si4435 |
| Manufacturer | Nanxin |
| Description | Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Dr... |
| Features |
·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings -30 +20 -8 -50 1.3 1.7 150 -55~+150 Unit V V A A W W ... |
| Document |
 Si4435 Data Sheet
PDF 303.73KB |
| Distributor | Stock | Price | Buy |
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