SI4431BDY - Vishay Siliconix

SI4431BDY P-Channel MOSFET

P-Channel 30-V (D-S) MOSFET Si4431BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = - 10 V - 30 0.050 at VGS = - 4.5 V ID (A) - 7.5 - 5.8 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFETs SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 7.5 - 6.0 - 5.7 - 4.6 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 2.1 .