SI4431ADY - Vishay Siliconix

SI4431ADY P-Channel MOSFET

P-Channel 30-V (D-S) MOSFET Si4431ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = –10 V –30 0.052 @ VGS = –4.5 V ID (A) –7.2 –5.5 FEATURES D TrenchFETr Power MOSFET SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4431ADY-T1 Si4431ADY-T1—E3 (Lead (Pb)-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA =.

Features

D TrenchFETr Power MOSFET SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4431ADY-T1 Si4431ADY-T1—E3 (Lead (Pb)-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS
  –30 VGS "20 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg
  –7.2
  –5.3
  –5.8
  –4.2
  –30
  –2.