SUP75P03-08 - Vishay Siliconix

SUP75P03-08 P-Channel MOSFET

SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) –30 rDS(on) (W) 0.008 ID (A) –75a TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP75P03-08 SUB75P03-08 P-Channel MOSFET D S Top View D ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Dra.

Features

ishay.com Free Air (TO-220AB) Symbol RthJA RthJA RthJC Limit 40 62.5 0.6 Unit _C/W 1 SUP/SUB75P03-08 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID =
  –250 mA VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "20 V VDS =
  –30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS =
  –30 V, VGS = 0 V, TJ = 125_C VDS =
  –30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS =
  –5 V, VGS =
  –10 V VGS =
  –10 V, ID =
  –30 A Drain-Source On-State Resistancea r.