SUP/SUB75N08-09L New Product Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) 0.009 @ VGS = 10 V 0.011 @ VGS = 4.5 V ID (A) "75 a TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP75N08-09L D S S N-Channel MOSFET Top View SUB75N08-09L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NO.
mounted on 1” square PCB (FR-4 material). Document Number: 70870 S-60951—Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 (TO-263)d RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB75N08-09L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUP75N08-10 |
Vishay |
N-Channel MOSFET | |
2 | SUP75N03-04 |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SUP75N03-07 |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SUP75N05-06 |
Vishay Siliconix |
N-Channel MOSFET | |
5 | SUP75N05-07 |
Vishay Siliconix |
N-Channel MOSFET | |
6 | SUP75N06-07L |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SUP75N06-08 |
TEMIC Semiconductors |
N-Channel Enhancement-Mode Transistors | |
8 | SUP75N06-08 |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SUP75N06-12L |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SUP75P03-07 |
Vishay Siliconix |
P-Channel MOSFET | |
11 | SUP75P03-08 |
Vishay Siliconix |
P-Channel MOSFET | |
12 | SUP75P05-08 |
Vishay Siliconix |
P-Channel MOSFET |